Paper Titles

Identification of Phonon Scattering Resonances with Defects in Gallium Arsenide
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Photoluminescence of Germanium Doped Gallium Arsenide
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Effect of Donor Nature on Behavior of Photoluminescence of the Gallium Vacancy - Shallow Donor Complexes in n-Type GaAs under Uniaxial Pressure
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Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAs
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Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs Substrates
p.243

Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States
p.249

Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE
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Thermal and Optical Emission Processes of Electrons and Holes from EL2 in N- and P-Type GaAs
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Studies of Deep Levels in n-GaAs by SADLTS
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Effects of Activation Annealing on Thermally...

Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs Substrates

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

243-248

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.243

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Online since:

November 1995

Authors:

H. Yoshida, Makoto Kiyama, T. Takebe, Masashi Yamashita, K. Fujita

Keywords:

Anneal, Deep Level, Defect, GaAs, Thermally Stimulated Currents

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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