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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Multi-Wafer VPE Growth and Characterization of SiC...

Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

173-176

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.173

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Online since:

May 2000

Authors:

H.D. Nordby, Jr., Michael J. O'Loughlin, Mike F. MacMillan, Albert A. Burk, James D. Oliver

Keywords:

Epitaxial Growth, Growth Rate, Multi-Wafer Reactor, Production

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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