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Recent Achievements and Future Challenges in SiC Homoepitaxial Growth
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Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers
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Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD
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High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
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Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

171-174

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.171

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Online since:

April 2002

Authors:

Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi

Keywords:

Electrical Characteristics, Epitaxial Growth, High Voltage (HV), Thick Layers

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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