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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Fast Epitaxial Growth of 4H-SiC by Chimney-Type...

Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

175-178

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.175

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Online since:

April 2002

Authors:

Keiko Fujihira, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

4H-SiC (03-38) Plane, Chemical Vapor Deposition (CVD), Deep Level, Photoluminescence (PL)

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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