Paper Titles
Overview
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Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling
p.9
Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method
p.13
On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates
p.17
Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
p.21
Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation
p.25
Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation
p.29
HTCVD Grown Semi-Insulating SiC Substrates
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Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
p.39

Growth of High Quality p-Type 4H-SiC Substrates by HTCVD

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

21-24

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.21

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Online since:

September 2003

Authors:

Björn Sundqvist, Alexsandre Ellison, A.K. Jonsson, Anne Henry, Christer Hallin, Peder Bergman, Björn Magnusson, Erik Janzén

Keywords:

Al Doping, HTCVD, Micropipe, SiC Bulk Growth

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

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