Paper Titles
Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method
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Growth of p-Type SiC Layer by Sublimation Epitaxy
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Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate
p.209
Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
p.213
Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence-
p.217
Thin Film SiC Epitaxy on Si(111) from Acetylene Precursor
p.221
Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization
p.225
Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates
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High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates
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Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence-

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

217-220

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.217

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Online since:

September 2003

Authors:

Takeshi Kusumori, Hachizo Muto

Keywords:

Hetero-Epitaxial Film, Polytype SiC, Pulsed Laser Deposition (PLD), RHEED, X-Ray Photoelectron Spectroscopy (XPS)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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