Paper Titles
Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices
p.247
Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
p.253
Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering
p.257
Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
p.261
Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
p.265
Doping-Related Strain in n-Doped 4H-SiC Crystals
p.269
Stacking Faults in 3C-SiC Relax Lattice Deformation
p.273
Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes
p.277
Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers
p.281

Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

265-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.265

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Online since:

September 2003

Authors:

Etienne Pernot, I. El Harrouni, Michel Mermoux, Jean Marie Bluet, Mikhail Anikin, Didier Chaussende, Michel Pons, Roland Madar

Keywords:

Raman Spectroscopy, Scanning Photoluminescence, Synchrotron Topography

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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