Paper Titles
Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing
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Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC
p.609
Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face
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Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC
p.617
Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes
p.621
High-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiC
p.625
SiC Delta-Doped-Layer Structures and DACFET
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Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC
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Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
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Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

621-624

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.621

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Online since:

September 2003

Authors:

Antonella Poggi, Roberta Nipoti, G.C. Cardinali, Francesco Moscatelli

Keywords:

C-V, EBIC, Ion Implantation, I-V, Planar Diodes, Scanning Electron Microscope (SEM)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] D.T. Morisette and J.A. Cooper, Jr: Mater. Sci. Forum Vol. 389-393 (2002), p.1133.

Google Scholar

[2] A. Syrkin, V. Dmitriev, R. Yakimova, A. Henry and E. Janzén: Mat. Sci. Forum Vol. 389-393 (2002), p.1173.

DOI: 10.4028/www.scientific.net/msf.389-393.1173

Google Scholar

[3] J.B. Tucker, M.V. Rao, N.A. Papanicolaou, J. Mittereder, A. Elasser, A.W. Clock, M. Ghezzo, O.W. Holland and K.A. Jones: IEEE Trans. Electron Devices, Vol. 48 (2001), p.2665.

DOI: 10.1109/16.974687

Google Scholar

[4] M. Lazar, L. Ottaviani, M.L. Locatelli, C. Raynaud, D. Planson, E. Morvan, P. Godignon, W. Skorupa and J.P. Chante: Mat. Sci. Forum Vol. 353-356 (2001), p.571.

DOI: 10.4028/www.scientific.net/msf.353-356.571

Google Scholar

[5] D. Aberg, A. Hallén, P. Pellegrino and B.G. Svensson: Appl. Phys. Lett. Vol. 78(2001), p.2908.

Google Scholar

[6] A. Poggi, R. Nipoti, G.C. Cardinali, F. Moscatelli: submitted to Appl. Phys. Lett.

Google Scholar