Paper Titles
Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC
p.617
Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes
p.621
High-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiC
p.625
SiC Delta-Doped-Layer Structures and DACFET
p.629
Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC
p.633
Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
p.637
Vacancy-Type Defect Distributions of 11B-, 14N- and 27Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy
p.641
Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide
p.645
First-Principles Studies of N and P Dopant Interactions in SiC: Implications for Co-Doping
p.649

Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

633-636

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.633

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Online since:

September 2003

Authors:

Takeshi Ohshima, Akira Uedono, Osamu Eryu, Kin Kiong Lee, Koji Abe, Hisayoshi Itoh, Kenshiro Nakashima

Keywords:

B Diffusion, B-Implantation, Co-Implantation, Vacancy Type Defects

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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