Paper Titles
Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
p.221
Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation
p.225
Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions
p.229
Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor
p.233
Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates
p.237
Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate
p.241
Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
p.245
Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum
p.249
Modelling of SiC-Matrix Composite Formation by Thermal Gradient Chemical Vapour Infiltration
p.253

Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

237-240

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.237

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Online since:

June 2004

Authors:

Caroline Blanc, C. Sartel, Véronique Soulière, Sandrine Juillaguet, Yves Monteil, Jean Camassel

Keywords:

<1,1,-2,0> Epitaxial Layers, a-Cut 4H-SiC, Photoluminescence (PL), Raman Scattering

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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