Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates

Caroline Blanc; Marcin Zielinski; Véronique Soulière; C. Sartel; Sandrine Juillaguet; Sylvie Contreras; Jean Camassel; Yves Monteil

doi:10.4028/www.scientific.net/MSF.483-485.117

Paper Titles

Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor
p.101

Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth
p.105

Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC
p.109

CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates
p.113

Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates
p.117

Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane
p.121

Is the Al Solubility Limit in SiC Temperature Dependent or not?
p.125

Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique
p.129

LPE of Silicon Carbide Using Diluted Si-Ge Flux
p.133

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Evaluation of p-Type Doping for (1,1,-2,0)...

Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates

Abstract:

We report an experimental investigation of the residual (n-type) and intentional (p-type) doping level of <11-20> epitaxial layers grown on a-cut 4H-SiC substrates. Using SIMS, C(V) measurements, low temperature photoluminescence and Hall effect investigations, we show that nitrogen incorporates 3 times more than usually found for <0001> surfaces. Conversely, aluminum incorporates 8 times less. Altogether, this is in excellent agreement with previous results from stepcontrolled epitaxy.