Paper Titles
Study of Ion Induced Damage in 4H-SiC
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Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers
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Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy
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Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC
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Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay
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Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals
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Optical Studies of Nonequilibrium Carrier Dynamics in Highly Excited 4H-SiC Epitaxial Layers
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Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC
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Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt
p.421

Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay

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Abstract:

A Microwave Photoconductivity Decay (M-PCD) technique which senses changes insample conductivity as carriers recombine following excitation by a laser pulse, has been used to determine the minority carrier recombination lifetime from the decay rate of carriers in 4H-SiC epitaxial layers. Decay times varying from 60 ns to 500 ns have been measured, with the decay increasing with thickness. Device simulations show that I-V characteristics of pin diodes fabricated with these epitaxial layers are compatible with the observed decay times.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

405-408

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.405

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Online since:

May 2005

Authors:

R.J. Kumar, Peter A. Losee, Can Hua Li, Joseph Seiler, I. Bhat, T. Paul Chow, J.M. Borrego, Ronald J. Gutmann

Keywords:

Carrier Lifetime, Epitaxial Growth, Non-Contacting Characterization, Silicon Carbide (SiC)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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