Paper Titles
SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design
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Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor
p.53
Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor
p.57
SiC and III-Nitride Growth in Hot-Wall CVD Reactor
p.61
New Achievements on CVD Based Methods for SiC Epitaxial Growth
p.67
Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive
p.73
High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
p.77
Homoepitaxial Growth of 4H-SiC Using CH3Cl Carbon Precursor
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Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD
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New Achievements on CVD Based Methods for SiC Epitaxial Growth

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Abstract:

The results of a new epitaxial process using an industrial 6x2” wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2>0.05) and an increase of the growth rate until about 20 µm/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2 %) with respect to the standard process without HCl.

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Silicon Carbide and Related Materials 2004 View Preview

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

67-72

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.67

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Online since:

May 2005

Authors:

Danilo Crippa, Gian Luca Valente, Alfonso Ruggiero, L. Neri, Ricardo Reitano, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, G. Abbagnale, Alessandro Veneroni, Fabrizio Omarini, L. Zamolo, Maurizio Masi, Fabrizio Roccaforte, G. Giannazzo, Salvatore Di Franco, Francesco La Via

Keywords:

Epitaxial Growth, Growth Rate, HCl, Reactor

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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