Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive

Rachael L. Myers-Ward; Olof Kordina; Z. Shishkin; Shailaja P. Rao; R. Everly; Stephen E. Saddow

doi:10.4028/www.scientific.net/MSF.483-485.73

Paper Titles

Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall Reactor
p.53

Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor
p.57

SiC and III-Nitride Growth in Hot-Wall CVD Reactor
p.61

New Achievements on CVD Based Methods for SiC Epitaxial Growth
p.67

Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive
p.73

High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
p.77

Homoepitaxial Growth of 4H-SiC Using CH₃Cl Carbon Precursor
p.81

Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD
p.85

4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles
p.89

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Increased Growth Rate in a SiC CVD Reactor Using...

Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive

Abstract:

Hydrogen chloride (HCl) was added to a standard SiC epitaxial growth process as an additive gas. A low-pressure, hot-wall CVD reactor, using silane and propane precursors and a hydrogen carrier gas, was used for these experiments. It is proposed that the addition of HCl suppresses Si cluster formation in the gas phase, and possibly also preferentially etches material of low crystalline quality. The exact mechanism of the growth using an HCl additive is still under investigation, however, higher growth rates could be obtained and the surfaces were improved when HCl was added to the flow. The film morphology was studied using SEM and AFM and the quality with LTPL analysis, which are reported.