Homoepitaxial Growth of 4H-SiC Using CH3Cl Carbon Precursor

Yaroslav Koshka; Huang De Lin; Galyna Melnychuck; Michael S. Mazzola; Jeffery L. Wyatt

doi:10.4028/www.scientific.net/MSF.483-485.81

Paper Titles

SiC and III-Nitride Growth in Hot-Wall CVD Reactor
p.61

New Achievements on CVD Based Methods for SiC Epitaxial Growth
p.67

Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive
p.73

High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
p.77

Homoepitaxial Growth of 4H-SiC Using CH₃Cl Carbon Precursor
p.81

Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD
p.85

4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles
p.89

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method
p.93

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
p.97

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Homoepitaxial Growth of 4H-SiC Using CH3Cl Carbon...

Homoepitaxial Growth of 4H-SiC Using CH₃Cl Carbon Precursor

Abstract:

The results of the initial experiments with halogenated carbon precursor chloromethane (CH3Cl) for epitaxial growth of 4H-SiC are presented. The growth rate for mirror-like morphology was easily increased up to about 7 µm/hr at C-rich conditions without detectable surface morphology degradation. Further increase of the silane flow resulted in island formation. The growth with the traditional silane-propane system at the same conditions (and optimized Si/C ratio) produced a very different result, with the growth rate decreasing from upstream to downstream, and morphology degradation taking place for much lower growth rate than in CH3Cl growth. Consequently, the epitaxial growth with chloromethane appears to have significantly different kinetics of the gas-phase precursor decomposition and different mechanisms of the surface reactions, which favors the step-flow growth. In addition, these preliminary data indicated that the maximum achievable growth rate corresponding to the good surface morphology may be noticeably larger for the CH3Cl+SiH4+H2 growth system.