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4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles

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Abstract:

Chemical vapor deposition of 4H-SiC on (0001) substrates with various off-angles from 1o to 45o has been investigated. On large-off-angled (15o-45o) substrates, very smooth surface morphology is obtained in the wide range of C/Si ratio. The micropipe dissociation during epitaxial growth is observed on 4o-45o off-angled substrates with a low C/Si ratio. The incorporation of nitrogen was dramatically suppressed by increasing C/Si ratio irrespective of substrate’s off-angle.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

89-92

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.89

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Online since:

May 2005

Authors:

Hiroaki Saitoh, Tsunenobu Kimoto

Keywords:

C/Si Ratio, Carrier Concentration, Chemical Vapor Deposition (CVD), Homoepitaxial Growth, Off-Angle

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

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