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HomeSolid State PhenomenaSolid State Phenomena Vols. 65-66The Optimization of the Cleaning to Remove...

The Optimization of the Cleaning to Remove Residual Bonds of Si-C and Si-F after Fluorocarbon Plasma Etch on the Silicon Surface

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Periodical:

Solid State Phenomena (Volumes 65-66)

Pages:

291-0

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.65-66.291

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Online since:

November 1998

Authors:

Y.B. Kim, Mikhail R. Baklanov, Thierry Conard, Serge Vanhaelemeersch, W. Vandervorst

Keywords:

Fluorocarbon, Plasma Etch, Polymer, Post Cleaning, Residue, Si-C, Si-F, Silicon, X-Ray Photoelectron Spectroscopy (XPS)

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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