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Defects and Diffusion in Semiconductors

Defect and Diffusion Forum Volumes 221 - 223

• Papers
• Abstracts

• p1 Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon   [ 161 K ]
  Authors: V.P Markevich, B. Hourahine, R.C. Newman, R. Jones, Mats Kleverman, J. Lennart Lindström, L.I. Murin, Masashi Suezawa, Sven Öberg, Patrick R. Briddon
• p11 New Approach to Capacitance Studies of 'DX' Centers   [ 270 K ]
  Authors: L. Dózsa
• p23 Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature   [ 191 K ]
  Authors: Takao Wada, Hiroshi Fujimoto
• p31 Modeling of Dopant and Defect Interactions in Si Process Simulators   [ 215 K ]
  Authors: Lourdes Pelaz, Luis Alberto Marqués, María Aboy, Juan Barbolla
• p41 Spectroscopic Study of Magnesium-Related Impurities in Silicon   [ 393 K ]
  Authors: L.T. Ho
• p51 Makyoh Topography: A Simple Yet Powerful Optical Method for Surface Flatness and Defect Characterisation   [ 616 K ]
  Authors: Ferenc Riesz
• p63 Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors   [ 2 M ]
  Authors: M. Kuzma
• p89 A Finite Difference Calculation of Impurity Migration in Semiconductors by the Kick-Out Mechanism   [ 397 K ]
  Authors: A. Benmakhlouf
• p109 In-Diffusion Concentration Profiles of Dopants in Semiconductors   [ 154 K ]
  Authors: E. Antoncik
• p123 Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy   [ 182 K ]
  Authors: B. Pivac, A. Sassella, A. Borghesi