Paper Titles
Preface, Committees
High-k Gate Dielectrics on Silicon and Germanium: Impact of Surface Preparation
p.3
UV Activated Surface Preparation of Silicon for High-k Dielectric Deposition
p.7
Enhanced Surface Preparation Techniques for the Si/High-k Interface
p.11
Uniform Ultrathin Oxide Growth for High-k Preclean
p.15
On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition
p.19
Interface State Densities and Surface Charge on Wet-Chemically Prepared Si(100) Surfaces
p.23
A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface
p.27
Surface Preparation Techniques for High-k Deposition on Ge Substrates
p.31

High-k Gate Dielectrics on Silicon and Germanium: Impact of Surface Preparation

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Abstract:

We review the impact of semiconductor surface preparation on the performance of metal-oxidesemiconductor field-effect transistor (MOSFET) gate stacks. We discuss high-permittivity dielectrics such as hafnium oxide and aluminum oxide on silicon and on the high carrier mobility substrate germanium. On Si, scaling of the gate stack is the prime concern. On Ge, fundamental issues of chemical and electrical passivation need to be resolved. Surface treatments considered include oxidation, nitridation, hydrogenation, chlorination, and organic functionalization.

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

3-6

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.3

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Online since:

April 2005

Authors:

Alessio Beverina, M.M. Frank, H. Shang, S. Rivillon, F. Amy, C.L. Hsueh, V.K. Paruchuri, R.T. Mo, M. Copel, E.P. Gusev, M.A. Gribelyuk, Y.J. Chabal

Keywords:

Atomic Layer Deposition, Germanium, High-k Dielectrics, Infrared Spectroscopy, Passivation, Scaling

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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