Occurrence of Arsenic-Based Defects and Techniques for Their Elimination

Felicia Goh; Christopher Lim; Vincent  Sih; Zainab Ismail; Simon Y.M. Chooi

doi:10.4028/www.scientific.net/SSP.103-104.87

Paper Titles

Surfactionated Rinse against Pattern Collapse and Defectivity in 193nm Lithography
p.71

Performance of a Linear Single Wafer IPA Vapour Based Drying System
p.75

Effective Rinse Aiming at Water-Mark-Free Drying for Single-Spin Wet Cleaning Process
p.79

Insights into Watermark Formation and Control
p.83

Occurrence of Arsenic-Based Defects and Techniques for Their Elimination
p.87

Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks
p.93

HF Based Solutions for HfO₂ Removal; Effect of pH and Temperature on HfO₂: SiO₂ Etch Selectivity
p.97

Selective Si₃N₄ Etch in Single Wafer Application
p.103

Etch Rate Depth Profiling by Single Wafer Etching Equipment
p.107

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Occurrence of Arsenic-Based Defects and Techniques for Their Elimination

Abstract:

Arsenic based defects were found on the surfaces of advanced CMOS patterned wafers after the pre-silicidation HF clean. Investigations into the mechanism of formation were done using representative As-implanted bare silicon, polysilicon and HDP silicon oxide films. The nature and composition of these As-based defects are believed to be arsenic and arsenic oxide. Methods of defect removal include the application of hydrogen peroxide containing solutions and hydrogen plasma dry cleaning.