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SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties
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Very High Growth Rate Epitaxy Processes with Chlorine Addition
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SiC Heteropolytype Structures Grown by Sublimation Epitaxy
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Carbonization of Porous Silicon for 3C-SiC Growth
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Carbonization Study of Different Silicon Orientations
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Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates
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SiC Heteropolytype Structures Grown by Sublimation Epitaxy

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Abstract:

In addition to possessing unique electrical properties, silicon carbide (SiC) can crystallize in different modifications (polytypes). Having the same chemical nature, SiC polytypes may significantly differ in their electrical parameters. In recent years, the world's interest in fabrication and study of heteropolytype structures based on silicon carbide has considerably increased. This paper considers studies concerned with fabrication of various types of heterostructures constituted by different SiC polytypes by sublimation epitaxy, and their electrical parameters. It is shown that heterostructures between SiC polytypes may have a better structural perfection than those constituted by semiconductors that differ in chemical nature. A conclusion is made that SiC-based heterostructures are promising for application in modern electronic devices.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

161-166

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.161

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Online since:

September 2007

Authors:

Alexander A. Lebedev

Keywords:

2D Electron Gas, Heteropolytype Structures, Quantum Well, Sublimation Epitaxy

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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