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Diffusion in Silicon

Defect and Diffusion Forum Volumes 153 - 155

• Papers
• Abstracts

• p1 Pressure and Stress Effects on Diffusion in Si   [ 540 K ]
  Authors: M.J. Aziz
• p11 Boron Diffusion in Pre-Amorphised Silicon: Interactions with the End of Range Defects   [ 822 K ]
  Authors: D. Mathiot, A. Claverie, A. Martinez
• p25 Stress in Silicon Nitride Films and Its Effect on Boron Diffusion in Silicon   [ 989 K ]
  Authors: Satoshi Matsumoto, K. Osada, Y. Zaitsu, T. Shimizu, Eisuke Arai, Shoichiro Tanigawa, F. Uberti
• p45 Quantum Effects on Hydrogen Diffusion in Silicon   [ 1 M ]
  Authors: C.P. Herrero
• p69 Self-Diffusion in Silicon   [ 693 K ]
  Authors: M.M. De Souza, E.M. Sankara Narayanan
• p81 Diffusion of Si Adsorbates on an Si(001) Surface   [ 744 K ]
  Authors: T. Doi, M. Ichikawa, S. Hosoki, K. Ninomiya
• p97 Vacancies and Vacancy Defects in Si Observed by Positron Annihilation   [ 707 K ]
  Authors: Pekka J. Hautojärvi, Kimmo Saarinen, J. Mäkinen, C. Corbel
• p111 Vacancy Distributions in Silicon and Methods for Their Accurate Determination   [ 1 M ]
  Authors: Horst Zimmermann
• p137 Interaction and Migration Properties of Ion Beam Induced Point Defects in Crystalline Silicon: Basic Research and Technological Relevance   [ 1 M ]
  Authors: Emanuele Rimini, Salvatore Coffa, Sebania Libertino, G. Mannino, F. Priolo, Vittorio Privitera
• p159 Review of Growth Striations in CZ and MCZ Silicon Wafers   [ 1 M ]
  Authors: H. Yamagishi
• p183 Theory of Reaction-Diffusion Processes at Very High Dopant Concentrations   [ 354 K ]
  Authors: E. Antoncik
• p193 Diffusion and Reaction Kinetics of Fast-Ion-Induced Point Defects Studied by Deep Level Transient Spectroscopy   [ 619 K ]
  Authors: Anders Hallén, N. Keskitalo, Bengt G. Svensson
• p205 Analytical Expressions for the Length of Stacking Faults during Thermal Nitridation of Oxidized Silicon and Silicon   [ 281 K ]
  Authors: N.K. Chen, K.C. Yu, C. Lee