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Silicon Carbide and Related Materials 2000

Materials Science Forum Volumes 353 - 356

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• p53 Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport   [ 252 K ]
  Authors: Sergey A. Reshanov, V.P. Rastegaev, Yuri M. Tairov
• p57 Virtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and Optimization   [ 240 K ]
  Authors: M.V. Bogdanov, O.V. Bord, A.O. Galyukov, S.Yu. Karpov, A.V. Kulik, S.K. Kochuguev, A.E. Komissarov, D.Kh. Ofengeim, A.M. Serkov, A.V. Tsiryulnikov, I.A. Zhmakin, M.S. Ramm, A.I. Zhmakin, Yuri N. Makarov
• p61 Coupled Thermodynamic - Mass Transfer Modeling of the SiC Boule Growth by the PVT Method   [ 191 K ]
  Authors: Alexander Pisch, Elisabeth Blanquet, Michel Pons, Claude Bernard, Jean Marc Dedulle, Roland Madar
• p65 Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals   [ 249 K ]
  Authors: M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Peter J. Wellmann, Dieter Hofmann
• p69 Crystal Growth of 15R-SiC and Various Polytype Substrates   [ 264 K ]
  Authors: Taro Nishiguchi, T. Shimizu, Makato Sasaki, S. Oshima, Shigehiro Nishino
• p73 Micropipe Filling by the Sublimation Close Space Technique   [ 210 K ]
  Authors: Tomoaki Furusho, Satoru Ohshima, Shigehiro Nishino
• p77 Mechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation Method   [ 312 K ]
  Authors: T. Shimizu, Taro Nishiguchi, Makato Sasaki, Satoru Ohshima, Shigehiro Nishino
• p81 Chemical Vapor Deposition of SiC by the Temperature Oscillation Method   [ 172 K ]
  Authors: Yu.V. Martynov
• p85 Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals   [ 259 K ]
  Authors: Didier Chaussende, Christophe Jacquier, Gabriel Ferro, Jean Claude Viala, François Cauwet, Yves Monteil
• p91 Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations   [ 200 K ]
  Authors: Jie Zhang, Alexsandre Ellison, Örjan Danielsson, Anne Henry, Erik Janzén
• p95 Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor   [ 194 K ]
  Authors: Günter Wagner, K. Irmscher
• p99 Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation   [ 262 K ]
  Authors: Örjan Danielsson, Urban Forsberg, Anne Henry, Erik Janzén
• p103 Modeling Analysis of SiC CVD in a Planetary Reactor   [ 222 K ]
  Authors: A.N. Vorob'ev, A.K. Semennikov, A.I. Zhmakin, Yuri N. Makarov, M. Dauelsberg, Frank Wischmeyer, M. Heuken, H. Jürgensen
• p107 Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc Reactor   [ 228 K ]
  Authors: A.N. Vorob'ev, M.V. Bogdanov, A.E. Komissarov, S.Yu. Karpov, O.V. Bord, A.A. Lovtsus, Yuri N. Makarov
• p111 Ab Initio Study of Silicon Carbide: Bulk and Surface Structures   [ 192 K ]
  Authors: C. Raffy, L. Magaud, Elisabeth Blanquet, Michel Pons, A. Pasturel