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Silicon Carbide and Related Materials 2000

Volumes 353 - 356
doi: 10.4028/www.scientific.net/MSF.353-356
Paper Titles published in this Main Theme:
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Paper Title Page

Sponsors and Committees

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Preface

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Overview

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Large Diameter, Low Defect Silicon Carbide Boule Growth

Authors: Calvin H. Carter Jr., R.C. Glass, M.F. Brady, D.P. Malta, D. Henshall, Stephan G. Müller, Valeri F. Tsvetkov, H. McD. Hobgood, Adrian R. Powell

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SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results

Authors: Cécile Moulin, Michel Pons, Alexander Pisch, Philippe Grosse, Christian Faure, Alain Basset, Gérard Basset, Antoine Passero, Thierry Billon, Bernard Pelissier, Mikhail Anikin, Etienne Pernot, Petra Pernot-Rejmánková, Roland Madar

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Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process

Authors: Peter Wellmann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker

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Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

Authors: Erwin Schmitt, Michael Rasp, Arnd Dietrich Weber, M. Kölbl, Robert Eckstein, L. Kadinski, M. Selder

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Progress in 4H-SiC Bulk Growth

Authors: Mikhail Anikin, Etienne Pernot, Bernard Pelissier, Michel Pons, Alexander Pisch, Claude Bernard, Thierry Billon, Christian Faure, Cécile Moulin, Roland Madar

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Stability Criteria for 4H-SiC Bulk Growth

Authors: Thomas L. Straubinger, Matthias Bickermann, Dieter Hofmann, Roland Weingärtner, Peter Wellmann, Albrecht Winnacker

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Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals

Authors: H. J. Rost, J. Dolle, J. Doerschel, D. Siche, D. Schulz, Jürgen Wollweber

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