HOME CONTACT My eBook

Username: Password:

> @scientific.net

Silicon Carbide and Related Materials 2006

Materials Science Forum Volumes 556 - 557

• Papers
• Abstracts
• buy eBook

• p73 CVD of 6H-SiC on Non-Basal Quasi Polar Faces   [ 1 M ]
  Authors: Y. Shishkin, Shailaja P. Rao, Olof Kordina, I. Agafonov, Andrei A. Maltsev, Jawad Hassan, Anne Henry, Catherine Moisson, Stephen E. Saddow
• p77 Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices   [ 136 K ]
  Authors: Joseph J. Sumakeris, Brett A. Hull, Michael J. O'Loughlin, Marek Skowronski, Vijay Balakrishna
• p81 Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient   [ 348 K ]
  Authors: Masahiko Ito, Hidekazu Tsuchida, Isaho Kamata, L. Storasta
• p85 Effect of Additional Silane on In Situ H₂ Etching prior to 4H-SiC Homoepitaxial Growth   [ 859 K ]
  Authors: Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura, Kazuo Arai
• p89 Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition   [ 1 M ]
  Authors: René A. Stein, Bernd Thomas, Christian Hecht
• p93 Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route   [ 304 K ]
  Authors: Maurizio Masi, Alessandro Veneroni, A. Fiorucci, Francesco La Via, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, Gian Luca Valente, Danilo Crippa
• p97 Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers   [ 568 K ]
  Authors: Henrik Pedersen, Anne Henry, Jawad Hassan, Peder Bergman, Erik Janzén
• p101 High Quality Uniform SiC Epitaxy for Power Device Applications   [ 223 K ]
  Authors: Jie Zhang, Esteban Romano, Janice Mazzola, Swapna G. Sunkari, Carl Hoff, Igor Sankin, Michael S. Mazzola
• p105 High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism   [ 741 K ]
  Authors: N. Boutarek, Didier Chaussende, Roland Madar
• p109 Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection   [ 2 M ]
  Authors: Xing Fang Liu, Guo Sheng Sun, Yong Mei Zhao, Jin Ning, J.Y. Li, Lei Wang, Wan Shun Zhao, M.C. Luo, Jin Min Li
• p113 Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors   [ 850 K ]
  Authors: Ho Keun Song, Han Seok Seo, Jeong Hyun Moon, Jeong Hyuk Yim, Jong Ho Lee, Sun Young Kwon, Hoon Joo Na, Hyeong Joon Kim
• p117 Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers   [ 2 M ]
  Authors: Andrew J. Trunek, Philip G. Neudeck, David J. Spry
• p121 In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition   [ 746 K ]
  Authors: Brian H. Ponczak, James D. Oliver, Soon Cho, Gary W. Rubloff
• p125 In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD   [ 140 K ]
  Authors: Brenda L. VanMil, Kok Keong Lew, Rachael L. Myers-Ward, Ronald T. Holm, D. Kurt Gaskill, Charles R. Eddy Jr.
• p129 Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate   [ 477 K ]
  Authors: T. Hori, Katsunori Danno, Tsunenobu Kimoto