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Materials Science Forum Vols. 65-66

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.65-66

ToC:

Table of Contents

Paper Title Page

Preface
Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar (δ) Doped III-V Semiconductors
Authors: J. Wagner
1
Determination of Residual Donor Concentration by Selective Pair Luminescence in Semi-Insulating GaAs
Authors: T. Iino
11
Dynamics of Selectively Excited Donor Acceptor Pairs in GaAs
Authors: T.D. Harris, J.K. Trautman, J.I. Colonell
21
A New Technology of Boron Diffusion into Silicon by Rapid Thermal Processing
Authors: Wan Quan Shi, Qing Run Hou, Shi Xiang Liu, Xue Jun Liu, Zheng Qing Fu, Zhi Jing He, L.W. Lu
29
Control of Shallow Boron Profile in Silicon
Authors: Zhi Heng Lu, Su Jie Li, Yan Luo
35
Photoionization Cross-Section Spectra of Shallow Acceptors in Semiconductors: Effect of a Change in Heavy - to Light-Hole Mass Ratio
Authors: A.F. Polupanov, V.I. Galiev, V.E. Zhuravlev
41
Electron-Hole Mechanism of Migration and Defect Interaction
Authors: A.B. Gerasimov
47
Delta-Doping in III-V Semiconductors
Authors: E.F. Schubert, R.F. Kopf
53
Optical Interband Transitions in Single and Periodically Delta-Doped GaAs Samples
Authors: A.A. Bernussi, J.A. Brum, P. Motisuke, P. Basmaji, M. Siu Li, O. Hipólito
67

Showing 1 to 10 of 73 Paper Titles