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Gettering and Defect Engineering in Semiconductor Technology VI

Solid State Phenomena Volumes 47 - 48

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• p523 Critical Points of Strained Si_1-yC_y Layers on Si(001)   [ 253 K ]
  Authors: W. Kissinger, Michael Weidner, H.J. Osten, M. Eichler
• p529 Dislocation-Related Photoluminescence in Graded SiGe Buffer Layers Grown by APCVD   [ 395 K ]
  Authors: H.B. Erzgräber, G. Kissinger, G. Morgenstern, T. Morgenstern
• p535 Elastic Relaxation of Pseudomorphic Strain in Quantum Dots   [ 236 K ]
  Authors: B. Dietrich, H. Frankenfeldt, Y.S. Tang, Clivia M. Sotomayor Torres, H.P. Zeindl, A. Wolff
• p541 Electrical Activity of Misfit Dislocations in GaAsSb/GaAs Heterojunctions   [ 296 K ]
  Authors: T. Wosiński, A. Makosa, J. Raczynska
• p547 Twin Formation during Epitaxial Growth of InP on Si   [ 501 K ]
  Authors: H.-H. Wehmann, G.-P. Tang, A. Koch, Michael Seibt, A. Schlachetzki
• p553 Interface Structure and Dislocation Formation in InGaAs/GaAs SQWs Grown with Different In Content on Vicinal Substrates   [ 677 K ]
  Authors: C. Frigeri, A. Di Paola, D.M. Ritchie, F. Longo, A. Brinciotti, M. Riva, F. Vidimari
• p561 Determination of Interface Structure and Bonding by Z-Contrast STEM   [ 577 K ]
  Authors: S.J. Pennycook, Nigel D. Browning, M.M. McGibbon, A.J. McGibbon, M.F. Chisholm, D.E. Jesson
• p573 Tomographic Atom Probe: A New Tool for Nanoscale Characterisation   [ 494 K ]
  Authors: M. Leisch
• p583 PHOTO-EDSR in Plastically Deformed p-Si   [ 300 K ]
  Authors: Hermann G. Grimmeiss, P. Omling, A.I. Shalynin
• p589 Cyclotron Resonance in Heavily Doped Silicon Quantum Wells   [ 374 K ]
  Authors: W. Gehlhoff, N.T. Bagraev, L.E. Klyachkin
• p595 TEM Analysis of Structure Modification Induced by Additional Carbon Incorporation in Silicon and Si_1-xGe_x Layers Grown with Molecular Beam Epitaxy   [ 445 K ]
  Authors: E. Bugiel, S. Ruvimov, H.J. Osten
• p601 Measurements of Diffusion Length in Si-SiGe Structures   [ 234 K ]
  Authors: O.V. Kononchuk, George A. Rozgonyi, Eugene B. Yakimov
• p607 Determination of Subgap-Asorption in μc-Si:H Films by CPM   [ 327 K ]
  Authors: R. Krankenhagen, M. Schmidt, W. Henrion, Irina Sieber, S. Koynov, S. Grebner, R. Schwarz
• p613 An Analysis of Residual Strain in Dry Etched Semiconductor Nanostructures   [ 431 K ]
  Authors: Y.S. Tang, Clivia M. Sotomayor Torres