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Gettering and Defect Engineering in Semiconductor Technology VI

Volumes 47 - 48
doi: 10.4028/www.scientific.net/SSP.47-48
Paper Titles published in this Main Theme:
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Paper Title Page

Influence of Point Defects on Defect Formation in Si:Er

Authors: N.A. Sobolev, O.V. Alexandrov, Valentin V. Emtsev, M.I. Makovijchuk, A.V. Merkulov, E.O. Parshin, D.S. Poloskin, Elena I. Shek

299

The Si:Er Crystal: Model and Excitation Mechanism of the Er-O Center

Authors: Nikolai T. Bagraev, D.E. Onopko, Alexandr I. Ryskin

307

Point Defect Concentrations, Distributions and Diffusivity in Thin Si MBE-Films: Experiments and Simulations Based on Profiling of Implanted Multiple Delta Doping Structures

Authors: D. Krüger, R. Kurps, H.P. Zeindl, U. Jagdhold

313

DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities

Authors: Andrei A. Istratov, O.F. Vyvenko

319

DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing

Authors: J.G. Park, George A. Rozgonyi

327

Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation

Authors: A. Correia, A. Boutry-Forveille, D. Ballutaud

353

Structural and Electrical Properties of NiSi2 Particles in Silicon

Authors: F. Riedel, J. Kronewitz, U. Gnauert, Michael Seibt, Wolfgang Schröter

359

Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an Explanation

Authors: Winfried Seifert, Martin Kittler, Michael Seibt, A. Buczkowski

365

Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon

Authors: A. Kaniava, Jan Vanhellemont, Eddy Simoen, C. Claeys, Eugenijus Gaubas

371

A Study of Defects Generated by BF2+ Implantation in Silicon Crystals and Their Annealing

Authors: K. Lal, G. Bhagavannarayana, G.S. Virdi

377

Showing 31 to 40 of 74 Paper Titles
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