Main Theme:

Gettering and Defect Engineering in Semiconductor Technology VI

Volumes 47 - 48
doi: 10.4028/www.scientific.net/SSP.47-48
Paper Titles published in this Main Theme:
Paper Title Page

Room Temperature UHV Silicon Direct Bonding

Authors: F. Shi, G. Elssner, Manfred Reiche, U.M. Gösele

143

External Gettering for Multicrystalline Silicon Wafers

Authors: Santo Martinuzzi, Isabelle Périchaud

153

Gettering of Transition Metals in Multicrystalline Silicon for Photovoltaic Applications

Authors: Eicke R. Weber, Scott A. McHugo, H. Hieslmair

165

Gettering of Au in Heat Treated Si/SiGe/Si Structures

Authors: K. Schmalz, D. Krüger, R. Kurps, T. Morgenstern, H.P. Zeindl

171

Gettering of Low Concentration Copper, Nickel and Iron Contamination in Czochralski Silicon Wafers

Authors: Z. Laczik, L. Bouwhuis, G.R. Booker, Robert J. Falster

177

Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing

Authors: Sergei V. Koveshnikov, Anant K. Agarwal, K.L. Beaman, George A. Rozgonyi

183

Interactions between Dopants and End-of-Range Defects in Silicon

Authors: A. Claverie, C. Bonafos, A. Martinez, Daniel Alquier

195

Behaviour of the Size Distribution Function of End-of-Range Dislocation Loops during Silicon Oxidation

Authors: Michael Seibt, E. Spiecker

205

SiC Buried Layer Formation Induced by Ion Implantation

Authors: N.I. Klyui, D. Krüger, B.N. Romanyuk, V.G. Litovchenko, Hans Richter

211

The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources

Authors: E.A. Steinman, Vitaly V. Kveder, Hermann Grimmeiss

217

Showing 11 to 20 of 74 Paper Titles