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Gettering and Defect Engineering in Semiconductor Technology VI

Solid State Phenomena Volumes 47 - 48

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• p299 Influence of Point Defects on Defect Formation in Si:Er   [ 373 K ]
  Authors: N.A. Sobolev, O.V. Alexandrov, Valentin V. Emtsev, M.I. Makovijchuk, A.V. Merkulov, E.O. Parshin, D.S. Poloskin, Elena I. Shek
• p307 The Si:Er Crystal: Model and Excitation Mechanism of the Er-O Center   [ 288 K ]
  Authors: N.T. Bagraev, D.E. Onopko, Alexandr I. Ryskin
• p313 Point Defect Concentrations, Distributions and Diffusivity in Thin Si MBE-Films: Experiments and Simulations Based on Profiling of Implanted Multiple Delta Doping Structures   [ 318 K ]
  Authors: D. Krüger, R. Kurps, H.P. Zeindl, U. Jagdhold
• p319 DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities   [ 460 K ]
  Authors: Andrei A. Istratov, O.F. Vyvenko
• p327 DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing   [ 1 M ]
  Authors: J.G. Park, George A. Rozgonyi
• p353 Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation   [ 571 K ]
  Authors: A. Correia, A. Boutry-Forveille, D. Ballutaud
• p359 Structural and Electrical Properties of NiSi₂ Particles in Silicon   [ 355 K ]
  Authors: F. Riedel, J. Kronewitz, U. Gnauert, Michael Seibt, Wolfgang Schröter
• p365 Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an Explanation   [ 308 K ]
  Authors: Winfried Seifert, Martin Kittler, Michael Seibt, A. Buczkowski
• p371 Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon   [ 276 K ]
  Authors: A. Kaniava, Jan Vanhellemont, Eddy Simoen, C. Claeys, Eugenijus Gaubas
• p377 A Study of Defects Generated by BF₂⁺ Implantation in Silicon Crystals and Their Annealing   [ 376 K ]
  Authors: K. Lal, G. Bhagavannarayana, G.S. Virdi
• p383 Surface Damage Induced by Reactive Ion Etching in n- Type Silicon   [ 308 K ]
  Authors: Antonella Poggi, E. Susi
• p391 The Effect of Metallization Induced Defects on Metal-Semiconductor Contacts   [ 282 K ]
  Authors: S.A. Goodman, F. Danie Auret, G. Myburg, C. Schutte
• p397 The Impact of Fe and Cu Contamination in the 10¹² at/cm² Range on the Performance of Junction Diodes   [ 331 K ]
  Authors: A.L.P. Rotondaro, E. Vandamme, Jan Vanhellemont, Eddy Simoen, Marc M. Heyns, C. Claeys
• p403 Low-Frequency Noise Sources Related to Processing-Induced Extended Defects in Si Devices   [ 343 K ]
  Authors: Eddy Simoen, Jan Vanhellemont, C. Claeys
• p409 Correlation between Dislocations and Electron Transport Properties in Si/SiGe   [ 288 K ]
  Authors: K. Ismail