Gettering and Defect Engineering in Semiconductor Technology VI
| Paper Title | Page |
|---|---|
|
Room Temperature UHV Silicon Direct Bonding Authors: F. Shi, G. Elssner, Manfred Reiche, U.M. Gösele |
143 |
|
External Gettering for Multicrystalline Silicon Wafers Authors: Santo Martinuzzi, Isabelle Périchaud |
153 |
|
Gettering of Transition Metals in Multicrystalline Silicon for Photovoltaic Applications Authors: Eicke R. Weber, Scott A. McHugo, H. Hieslmair |
165 |
|
Gettering of Au in Heat Treated Si/SiGe/Si Structures Authors: K. Schmalz, D. Krüger, R. Kurps, T. Morgenstern, H.P. Zeindl |
171 |
|
Gettering of Low Concentration Copper, Nickel and Iron Contamination in Czochralski Silicon Wafers Authors: Z. Laczik, L. Bouwhuis, G.R. Booker, Robert J. Falster |
177 |
|
Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing Authors: Sergei V. Koveshnikov, Anant K. Agarwal, K.L. Beaman, George A. Rozgonyi |
183 |
|
Interactions between Dopants and End-of-Range Defects in Silicon Authors: A. Claverie, C. Bonafos, A. Martinez, Daniel Alquier |
195 |
|
Authors: Michael Seibt, E. Spiecker |
205 |
|
SiC Buried Layer Formation Induced by Ion Implantation Authors: N.I. Klyui, D. Krüger, B.N. Romanyuk, V.G. Litovchenko, Hans Richter |
211 |
|
The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources Authors: E.A. Steinman, Vitaly V. Kveder, Hermann Grimmeiss |
217 |