Gettering and Defect Engineering in Semiconductor Technology VI
Solid State Phenomena Volumes 47 - 48
doi:10.4028/www.scientific.net/SSP.47-48
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p299
Influence of Point Defects on Defect Formation in Si:Er
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373 K
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Authors: N.A. Sobolev, O.V. Alexandrov, Valentin V. Emtsev, M.I. Makovijchuk, A.V. Merkulov, E.O. Parshin, D.S. Poloskin, Elena I. Shek
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p307
The Si:Er Crystal: Model and Excitation Mechanism of the Er-O Center
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288 K
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Authors: N.T. Bagraev, D.E. Onopko, Alexandr I. Ryskin
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p313
Point Defect Concentrations, Distributions and Diffusivity in Thin Si MBE-Films: Experiments and Simulations Based on Profiling of Implanted Multiple Delta Doping Structures
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318 K
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Authors: D. Krüger, R. Kurps, H.P. Zeindl, U. Jagdhold
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p319
DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities
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460 K
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Authors: Andrei A. Istratov, O.F. Vyvenko
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p327
DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing
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1 M
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Authors: J.G. Park, George A. Rozgonyi
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p353
Copper Precipitation in Monocrystalline Silicon: Role of Initial Oxygen Concentration and Thermal Oxidation
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571 K
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Authors: A. Correia, A. Boutry-Forveille, D. Ballutaud
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p359
Structural and Electrical Properties of NiSi2 Particles in Silicon
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355 K
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Authors: F. Riedel, J. Kronewitz, U. Gnauert, Michael Seibt, Wolfgang Schröter
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p365
Contrastive Recombination Behaviour of Metal Silicide and Oxygen Precipitates in n-Type Silicon: Attempt at an Explanation
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308 K
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Authors: Winfried Seifert, Martin Kittler, Michael Seibt, A. Buczkowski
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p371
Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon
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276 K
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Authors: A. Kaniava, Jan Vanhellemont, Eddy Simoen, C. Claeys, Eugenijus Gaubas
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p377
A Study of Defects Generated by BF2+ Implantation in Silicon Crystals and Their Annealing
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376 K
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Authors: K. Lal, G. Bhagavannarayana, G.S. Virdi
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p383
Surface Damage Induced by Reactive Ion Etching in n- Type Silicon
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308 K
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Authors: Antonella Poggi, E. Susi
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p391
The Effect of Metallization Induced Defects on Metal-Semiconductor Contacts
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282 K
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Authors: S.A. Goodman, F. Danie Auret, G. Myburg, C. Schutte
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p397
The Impact of Fe and Cu Contamination in the 1012 at/cm2 Range on the Performance of Junction Diodes
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331 K
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Authors: A.L.P. Rotondaro, E. Vandamme, Jan Vanhellemont, Eddy Simoen, Marc M. Heyns, C. Claeys
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p403
Low-Frequency Noise Sources Related to Processing-Induced Extended Defects in Si Devices
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343 K
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Authors: Eddy Simoen, Jan Vanhellemont, C. Claeys
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p409
Correlation between Dislocations and Electron Transport Properties in Si/SiGe
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288 K
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Authors: K. Ismail