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Articles by author: Anna Cavallini

• About the Electrical Properties of Oxygen Phases Segregated by Annealing Cz Silicon in the 600-800°C Range
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p327)
• Analysis of Σ=3 and Σ=9 Twin Boundaries in Three-Crystal Silicon Ingots
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p455)
• Beam Injection Methods as Tools for Studying Extended Defects in Semiconductors: Characteristics and Capabilities
  Published in: Polycrystalline Semiconductors IV (p51)
• Characterisation of Surface and Near-Surface Regions in High-Purity Cz Si
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p747)
• Characterization of Electrical Contacts on Polycrystalline 3C-SiC Thin Films
  Published in: Silicon Carbide and Related Materials 2004 (p745)
• Charge Collection Scanning Microscopy: Non-Conventional Applications
  Published in: Beam Injection Assessment of Defects in Semiconductors (p1)
• Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2000 (p757)
• Correlation between Current Transport and Defects in n⁺/p 6H-SiC Diodes
  Published in: Silicon Carbide and Related Materials 2005 (p811)
• Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes
  Published in: Silicon Carbide and Related Materials - 2002 (p455)
• C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al⁺ Implanted JTE p⁺n 4H-SiC Diodes
  Published in: Silicon Carbide and Related Materials 2008 (p469)
• Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2003 (p1081)
• EBIC Characterization of Oxygen Precipitation and Denuded Zone in Intrinsically Gettered P-Type Czochralski Silicon
  Published in: Beam Injection Assessment of Defects in Semiconductors (p97)
• Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2003 (p1503)
• Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p143)
• Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing
  Published in: Polycrystalline Semiconductors V (p39)