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Papers by Author: Anne Henry

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Nitrogen Delta Doping in 4H-SiC Epilayers

Authors: Anne Henry, L. Storasta, Erik Janzén

153

Growth of High Quality p-Type 4H-SiC Substrates by HTCVD

Authors: Björn Sundqvist, Alexsandre Ellison, A.K. Jonsson, Anne Henry, Christer Hallin, Peder Bergman, Björn Magnusson, Erik Janzén

Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions

Authors: Shinji Nakagomi, Hiroaki Shinobu, Lars Unéus, Ingemar Lundström, Lars-G. Ekedahl, Rositza Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén, Anita Lloyd Spetz

1423

The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures

Authors: Lars Unéus, Shinji Nakagomi, Margareta K. Linnarsson, Martin S. Janson, Bengt Gunnar Svensson, Rositza Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén, Lars-G. Ekedahl, Ingemar Lundström, Anita Lloyd Spetz

1419

Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

Authors: Uwe Zimmermann, John Österman, Jie Zhang, Anne Henry, Anders Hallén

1285

Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density

Authors: Alexander Syrkin, Vladimir Dmitriev, Rositza Yakimova, Anne Henry, Erik Janzén

1173

Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy

Authors: Anne Henry, Alexsandre Ellison, Urban Forsberg, Björn Magnusson, G.R. Pozina, Erik Janzén

593

Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Authors: Örjan Danielsson, S. Jönsson, Anne Henry, Erik Janzén

219

Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters

Authors: Urban Forsberg, Örjan Danielsson, Anne Henry, Margareta K. Linnarsson, Erik Janzén

203

Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation

Authors: Jie Zhang, Urban Forsberg, M. Isacson, Alexsandre Ellison, Anne Henry, Olof Kordina, Erik Janzén

191