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Articles by author: Christer Hallin

• 3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
  Published in: Silicon Carbide and Related Materials - 1999 (p149)
• 3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction
  Published in: Silicon Carbide and Related Materials - 1999 (p153)
• 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching
  Published in: Silicon Carbide and Related Materials 2001 (p1215)
• 4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues
  Published in: Silicon Carbide and Related Materials 2003 (p985)
• A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer
  Published in: Silicon Carbide and Related Materials 2004 (p905)
• A Comparison between SiO₂/4H-SiC Interface Traps on (0001) and (11-20) Faces
  Published in: Silicon Carbide and Related Materials 2003 (p1305)
• A Deep Photoluminescence Band in 4H SiC Related to the Silicon Vacancy
  Published in: Defects in Semiconductors 19 (p685)
• Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p473)
• Cathodoluminescence of Defect Regions in SiC Epi-Films
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p653)
• CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p123)
• Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p901)
• Doping-Related Strain in n-Doped 4H-SiC Crystals
  Published in: Silicon Carbide and Related Materials - 2002 (p269)
• Electrical Activity of Residual Boron in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p549)
• Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p557)
• Evaluation of Auger Recombination Rate in 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p533)