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Articles by author: Edouard V. Monakhov

• Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p365)
• Carrier Removal in Electron Irradiated 4H and 6H SiC
  Published in: Silicon Carbide and Related Materials 2007 (p425)
• Defect Behaviour in Deuterated and Non-Deuterated n-Type Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p553)
• Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p705)
• Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p481)
• Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p371)
• Ion Implantation Processing and Related Effects in SiC
  Published in: Silicon Carbide and Related Materials 2005 (p781)
• Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2005 (p485)
• Radiation Induced Defect Levels in Highly Doped n-Type Si_1-xGe_x Strained Layers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p185)
• Radiation-Induced Electronic Defect Levels in High-Resistivity Si Detectors
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p441)