Papers by Author: Eisuke Arai

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Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
Authors: Masashi Kato, Shun Ichiro Tanaka, Masaya Ichimura, Eisuke Arai, Shun-ichi Nakamura, Tsunenobu Kimoto
381
Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
Authors: Masashi Kato, Masaya Ichimura, M. Ichimura, Eisuke Arai, Shingo Sumie, Hidehisa Hashizume
505
Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions
Authors: Masashi Kato, Masaya Ichimura, Eisuke Arai, P. Ramasamy
665
Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods
Authors: Masashi Kato, Masaya Ichimura, Eisuke Arai, Yutaka Tokuda
1
Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
Authors: Masashi Kato, Masaya Ichimura, Eisuke Arai
933
Surface Concentration Dependence of Diffusion Profile Shape for Phosphorus in Si
Authors: Y. Banno, T. Ichino, H. Uchida, Masaya Ichimura, Eisuke Arai, Masayuki Yoshida
275
Stress in Silicon Nitride Films and Its Effect on Boron Diffusion in Silicon
Authors: Satoshi Matsumoto, K. Osada, Y. Zaitsu, T. Shimizu, Eisuke Arai, Shoichiro Tanigawa, F. Uberti
25
Diffusion of Water into Quartz and Silica Glass
Authors: O. Dersch, A. Zouine, F. Rauch, Eisuke Arai
389
Unique Diffusion of Phosphorus in Silicon Based on the Pair Diffusion Model
Authors: M. Yoshida, Eisuke Arai
999
Effects of Si3N4 Films on Diffusion of Boron and Extended Defects in Silicon during Post-Implantation Annealing
Authors: Y. Zaitsu, K. Osada, T. Shimizu, Satoshi Matsumoto, M. Yoshida, Eisuke Arai, Takeji Abe
1891
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