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Articles by author: Eisuke Arai

• Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
  Published in: Silicon Carbide and Related Materials 2001 (p933)
• Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods
  Published in: Defects and Diffusion in Ceramics (p1)
• Diffusion of Water into Quartz and Silica Glass
  Published in: Materials Science Applications of Ion Beam Techniques (p389)
• Effects of Si₃N₄ Films on Diffusion of Boron and Extended Defects in Silicon during Post-Implantation Annealing
  Published in: Defects in Semiconductors 18 (p1891)
• Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions
  Published in: Silicon Carbide and Related Materials - 2002 (p665)
• Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
  Published in: Silicon Carbide and Related Materials 2003 (p505)
• Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2004 (p381)
• Stress in Silicon Nitride Films and Its Effect on Boron Diffusion in Silicon
  Published in: Diffusion in Silicon (p25)
• Surface Concentration Dependence of Diffusion Profile Shape for Phosphorus in Si
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p275)
• Unique Diffusion of Phosphorus in Silicon Based on the Pair Diffusion Model
  Published in: Diffusion in Materials DIMAT 1996 (p999)