HomeErik Janzén

Papers by Author: Erik Janzén

Paper TitlePage

Defects in High-Purity Semi-Insulating SiC

Authors: Nguyen Tien Son, Björn Magnusson, Z. Zolnai, Alexsandre Ellison, Erik Janzén

437

Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization

Authors: S.M. Bishop, Edward A. Preble, Christer Hallin, Anne Henry, L. Storasta, Henrik Jacobsson, B.P. Wagner, Z.J. Reitmeier, Erik Janzén, Robert F. Davis

221

Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD

Authors: Christer Hallin, Qamar-ul Wahab, Ivan G. Ivanov, Peder Bergman, Erik Janzén

193

SiC Crystal Growth by HTCVD

Authors: Alexsandre Ellison, Björn Magnusson, Björn Sundqvist, G.R. Pozina, Peder Bergman, Erik Janzén, A. Vehanen

Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC

Authors: A. Kakanakova-Georgieva, Urban Forsberg, Christer Hallin, P.O.Å. Persson, L. Storasta, G.R. Pozina, Jens Birch, L. Hultman, Erik Janzén

991

Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes

Authors: Henrik Jacobsson, Peder Bergman, Christer Hallin, T.O. Tuomi, Erik Janzén

913

Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs

Authors: Sang-Mo Koo, Martin Domeij, Carl Mikael Zetterling, Mikael Östling, Urban Forsberg, Erik Janzén

773

A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates

Authors: Joakim Eriksson, Niklas Rorsman, Herbert Zirath, Anne Henry, Björn Magnusson, Alexsandre Ellison, Erik Janzén

737

Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers

Authors: L. Kasamakova-Kolaklieva, Rositza Yakimova, Roumen Kakanakov, A. Kakanakova-Georgieva, Mikael Syväjärvi, Erik Janzén

709

A Cause for SiC/SiO₂ Interface States: the Site Selection of Oxygen in SiC

Authors: Peter Deák, Adam Gali, Z. Hajnal, Thomas Frauenheim, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke, P. Ordejón

535