Articles by author: Erik Janzén
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The Pseudodonor Electronic States of a Metastable Defect in Silicon Studied by Uniaxial Stress Spectroscopy
Published in: Defects in Semiconductors 16 (p327) -
The Silicon Vacancy in SiC
Published in: Silicon Carbide and Related Materials 2008 (p347) -
Theoretical Investigation of an Intrinsic Defect in SiC
Published in: Silicon Carbide and Related Materials 2001 (p477) -
Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
Published in: Silicon Carbide and Related Materials 2004 (p519) -
Theory of Neutral Divacancy in SiC: A Defect for Spintronics
Published in: Silicon Carbide and Related Materials 2009 (p395) -
Theory of the Stark Effect on the Donor Levels in 4H Silicon Carbide
Published in: Silicon Carbide and Related Materials 2006 (p435) -
Thick Epilayer for Power Devices
Published in: Silicon Carbide and Related Materials 2006 (p47) -
Thickness Contour Mapping of SiC Epi-Films on SiC Substrates
Published in: Silicon Carbide, III-Nitrides and Related Materials (p645) -
Time Resolved PL Study of Multi Bound Excitons in 3C SiC
Published in: Silicon Carbide, III-Nitrides and Related Materials (p485) -
Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC
Published in: Silicon Carbide and Related Materials - 2002 (p301) -
Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiC
Published in: Silicon Carbide and Related Materials - 1999 (p675) -
Titanium Related Luminescence in SiC
Published in: Silicon Carbide and Related Materials 2007 (p461) -
Vacancies and their Complexes with H in SiC
Published in: Silicon Carbide and Related Materials - 1999 (p817) -
Vanadium-related Center in 4H Silicon Carbide
Published in: Silicon Carbide and Related Materials - 1999 (p631) -
Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
Published in: Silicon Carbide and Related Materials 2007 (p115)