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Articles by author: F. Danie Auret

• Comparison between Defects Introduced during Electron Beam Evaporation of Pt and Ti on n-GaAs
  Published in: Defects in Semiconductors 16 (p1499)
• Defect Behaviour in Deuterated and Non-Deuterated n-Type Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p553)
• Defect Formation by Low Energy Ions during Sputter Deposition of TiW and Au on Epitaxially Grown n-Si at Different Plasma Pressures
  Published in: Materials Science Applications of Ion Beam Techniques (p249)
• Electrical and Defect Characterization of Sputter Deposited Au and Cr Schottky Barrier Diodes on GaAs
  Published in: Defects in Semiconductors 18 (p1955)
• Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment
  Published in: Defects in Semiconductors 19 (p565)
• Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs
  Published in: Defects in Semiconductors 19 (p1045)
• Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si_1-xGe_x
  Published in: Defects in Semiconductors 19 (p115)
• Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation
  Published in: Silicon Carbide and Related Materials 2010 (p804)
• Electronic Properties of Defects Introduced during Electron and Alpha Irradiation of GaAs
  Published in: Defects in Semiconductors 17 (p1559)
• Electronic Properties of Defects Introduced in n- and p-Type Si_1-xGe_x During Ion Etching
  Published in: Defects in Semiconductors 19 (p133)
• ODMR Investigation of Proton Irradiated GaAs
  Published in: Defects in Semiconductors 19 (p1021)
• Processing-Induced Defects in Epitaxially Grown p- and n-Type SiGe
  Published in: Defects and Diffusion in Semiconductors IV (p161)
• The Effect of Metallization Induced Defects on Metal-Semiconductor Contacts
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p391)
• Thermal Stability of Ti/Mo Schottky Contacts on p-Si and Defects Introduced in p-Si during Electron Beam Deposition of Ti/Mo
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p561)