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Articles by author: Giuseppe Abbondanza

• 3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP)
  Published in: Silicon Carbide and Related Materials 2009 (p135)
• 3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.
  Published in: Silicon Carbide and Related Materials 2007 (p243)
• Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films
  Published in: Silicon Carbide and Related Materials 2009 (p167)
• Carbonization Study of Different Silicon Orientations
  Published in: Silicon Carbide and Related Materials 2006 (p171)
• Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2004 (p429)
• Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor
  Published in: Silicon Carbide and Related Materials 2004 (p57)
• Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
  Published in: Silicon Carbide and Related Materials 2005 (p163)
• Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
  Published in: Silicon Carbide and Related Materials 2006 (p93)
• Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures
  Published in: Silicon Carbide and Related Materials 2008 (p967)
• New Achievements on CVD Based Methods for SiC Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2004 (p67)
• Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
  Published in: Silicon Carbide and Related Materials 2005 (p199)
• Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
  Published in: Silicon Carbide and Related Materials 2006 (p137)
• Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios
  Published in: Silicon Carbide and Related Materials 2009 (p255)
• SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
  Published in: Silicon Carbide and Related Materials 2007 (p123)
• SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
  Published in: Silicon Carbide and Related Materials 2005 (p179)