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Articles by author: Hiroyuki Matsunami

• 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching
  Published in: Silicon Carbide and Related Materials 2001 (p1215)
• 4H-SiC (11-20) Epitaxial Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p189)
• 4H-SiC MOSFETs on (03-38) Face
  Published in: Silicon Carbide and Related Materials 2001 (p1065)
• 4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)
  Published in: Silicon Carbide and Related Materials 2003 (p1409)
• 600V 4H-SiC RESURF-Type JFET
  Published in: Silicon Carbide and Related Materials 2003 (p1189)
• An Overview of SiC Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p125)
• Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
  Published in: Silicon Carbide and Related Materials - 1999 (p1105)
• Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p651)
• Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes
  Published in: Silicon Carbide and Related Materials - 2002 (p197)
• Conductivity Control of SiC by In-Situ Doping and Ion Implantation
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p675)
• Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films
  Published in: Silicon Carbide and Related Materials 2003 (p521)
• Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p451)
• Deep States in SiO₂/p-Type 4H-SiC Interface
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p841)
• Dose Designing for High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication
  Published in: Silicon Carbide and Related Materials 2004 (p809)
• Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing
  Published in: Silicon Carbide and Related Materials 2004 (p617)