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Papers by Author: Jan Vanhellemont

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Lattice Defects in Si_1-xGe_x Epitaxial Diodes Induced by 20-MeV Alpha Rays

Authors: H. Ohyama, Jan Vanhellemont, Eddy Simoen, Cor Claeys, Y. Takami, K. Hayama, H. Sunaga, Jef Poortmans, Matty Caymax

121

Differential Interference Contrast Microscopy of Defects in As-Grown and Annealed Si Wafers

Authors: M.-A. Trauwaert, Jan Vanhellemont, U. Lambert, D. Gräf, Karine Kenis, Paul W. Mertens, Marc Heyns

387

Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes

Authors: A. Czerwinski, Eddy Simoen, Jan Vanhellemont, Daniel Tomaszewski, J. Gibki, A. Bakowski

477

The Role of Grown-in Defects in Advanced Silicon Technology

Authors: G. Kissinger, D. Gräf, Jan Vanhellemont, U. Lambert, Hans Richter

337

Lifetime Considerations for High-Energy Proton Irradiated Si p-n Junction Diodes

Authors: Eddy Simoen, Jan Vanhellemont, Cor Claeys

251

Lattice Defects in Si_1-xGe_x Devices by Proton Irradiation and their Effect on Device Performance

Authors: H. Ohyama, Eddy Simoen, Cor Claeys, Jan Vanhellemont, Y. Takami, H. Sunaga, Jef Poortmans, Matty Caymax

239

Radiation Induced Defects InGaAs Photodiodes by 1-MeV Fast Neutrons

Authors: H. Ohyama, Eddy Simoen, Cor Claeys, Jan Vanhellemont, T. Kudou, Y. Takami, H. Sunaga

213

Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements

Authors: Eugenijus Gaubas, Jan Vanhellemont, Eddy Simoen, Cor Claeys, Winfried Seifert

155

Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Ligth Scattering and Preferential Etching Techniques

Authors: Jan Vanhellemont, G. Kissinger, D. Gräf, Karine Kenis, M. Depas, Paul W. Mertens, U. Lambert, Marc Heyns, Cor Claeys, Hans Richter, P. Wagner

1755

On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.

Authors: M.-A. Trauwaert, Jan Vanhellemont, H.E. Maes, A.-M. Van Bavel, G. Langouche, Andre Stesmans, Paul Clauws

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