Papers by Author: Jens Birch

Abstract: 3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000°C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied by reciprocal space map (RSM) which shows that double positions domains exists.

Abstract: The present paper deals with morphological and structural investigation of 3C-SiC layers grown by sublimation epitaxy on on axis 6H-SiC(0001) at source temperature 2000 °C, under vacuum conditions (<10-5 mbar) and different temperature gradients in the range of 5-8 °C/mm. The layer grown at a temperature gradient 6 °C/mm has the largest average domain size of 0.4 mm2 assessed by optical microscope in transmission mode. The rocking curve full width at half maximum (FWHM) of (111) reflection is 43 arcsec which suggests good crystalline quality. The AFM image of the same layer shows steps with height 0.25 nm and 0.75 nm which are characteristic of a stacking fault free 3C-SiC surface and c-axis repeat height, respectively.