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Articles by author: Jens Birch

• Doping-Related Strain in n-Doped 4H-SiC Crystals
  Published in: Silicon Carbide and Related Materials - 2002 (p269)
• Growth of Epitaxial (SiC)_x(AlN)_1-x Thin Films on 6H-SiC by Ion-Assisted Dual Magnetron Sputter Deposition
  Published in: Silicon Carbide and Related Materials 2001 (p1481)
• Growth of High Quality AIN Epitaxial Films by Hot-Wall Chemical Vapour Deposition
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1133)
• High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2000 (p291)
• Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p991)
• Lateral Enlargement of Silicon Carbide Crystals
  Published in: Silicon Carbide and Related Materials 2001 (p39)
• Low-Energy-Ion-Assisted Reactive Sputter Deposition of Epitaxial AlN Thin Films on 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p1519)
• Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p183)
• Properties of AlN Layers Grown by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials - 2002 (p995)
• Reactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin Films
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1225)
• Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials 2008 (p181)