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Articles by author: L.B. Rowland

• 1400 V 4H-SiC Power MOSFETs
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p989)
• 4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal
  Published in: Silicon Carbide and Related Materials 2005 (p1265)
• 4H-SiC Gate Turn-Off (GTO) Thyristor Development
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1069)
• 6H and 4H-SiC Avalanche Photodiodes
  Published in: Silicon Carbide and Related Materials 2008 (p869)
• An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers
  Published in: Silicon Carbide and Related Materials 2006 (p227)
• Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2001 (p231)
• Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation
  Published in: Silicon Carbide and Related Materials - 1999 (p733)
• Influence of Buffer Layer on DC and RF Performance of 4H SiC MESFET
  Published in: Silicon Carbide and Related Materials 2003 (p1193)
• Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy
  Published in: Silicon Carbide and Related Materials - 1999 (p161)
• Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p517)
• Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p115)
• Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices
  Published in: Silicon Carbide and Related Materials 2006 (p141)
• Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2001 (p427)
• Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films
  Published in: Defects in Semiconductors 18 (p37)