HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Michel Pons

• A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
  Published in: Silicon Carbide and Related Materials - 2002 (p87)
• Ab Initio Study of Silicon Carbide: Bulk and Surface Structures
  Published in: Silicon Carbide and Related Materials 2000 (p111)
• Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
  Published in: Silicon Carbide and Related Materials 2005 (p99)
• Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
  Published in: Silicon Carbide and Related Materials 2003 (p91)
• Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy
  Published in: Silicon Carbide and Related Materials 2007 (p71)
• Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
  Published in: Silicon Carbide and Related Materials 2003 (p135)
• Coupled Thermodynamic - Mass Transfer Modeling of the SiC Boule Growth by the PVT Method
  Published in: Silicon Carbide and Related Materials 2000 (p61)
• Defect Reduction in SiC Crystals Grown by the Modified Lely Method
  Published in: Silicon Carbide and Related Materials - 2002 (p83)
• Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H
  Published in: Silicon Carbide and Related Materials 2003 (p387)
• Enlargement of SiC Crystals: Defect Formation at the Interfaces
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p45)
• Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics
  Published in: Silicon Carbide and Related Materials - 1999 (p91)
• Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p141)
• Experimental Investigation of 4H-SiC Bulk Crystal Growth
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p17)
• Free Growth of 4H-SiC by Sublimation Method
  Published in: Silicon Carbide and Related Materials 2003 (p71)
• Gas Fed Top-Seeded Solution Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2005 (p111)