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Articles by author: Mikhail Anikin

• Defect Reduction in SiC Crystals Grown by the Modified Lely Method
  Published in: Silicon Carbide and Related Materials - 2002 (p83)
• Enlargement of SiC Crystals: Defect Formation at the Interfaces
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p45)
• Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics
  Published in: Silicon Carbide and Related Materials - 1999 (p91)
• Experimental Investigation of 4H-SiC Bulk Crystal Growth
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p17)
• Free Growth of 4H-SiC by Sublimation Method
  Published in: Silicon Carbide and Related Materials 2003 (p71)
• Growth of AlN and AlN-SiC Solid Solution by Sublimation Method
  Published in: Silicon Carbide and Related Materials 2005 (p1501)
• Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
  Published in: Silicon Carbide and Related Materials - 2002 (p265)
• Numerical Simulation of SiC Boule Growth by Sublimation
  Published in: Silicon Carbide and Related Materials - 1999 (p25)
• Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding
  Published in: Silicon Carbide and Related Materials 2005 (p71)
• Progress in 4H-SiC Bulk Growth
  Published in: Silicon Carbide and Related Materials 2000 (p21)
• Progress in SiC Bulk Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p13)
• Seed Surface Preparation for SiC Sublimation Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p47)
• SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results
  Published in: Silicon Carbide and Related Materials 2000 (p7)
• Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2001 (p143)
• Wettability Study of SiC in Correlation with XPS Analysis
  Published in: Silicon Carbide and Related Materials 2003 (p423)