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Papers by Author: Mitsuhiro Kushibe

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Impact Ionization Coefficients of 4H-SiC

Authors: Tetsuo Hatakeyama, Takatoshi Watanabe, Kazutoshi Kojima, Nobuyuki Sano, K. Shiraishi, Mitsuhiro Kushibe, Seiji Imai, Takashi Shinohe, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

673

Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process

Authors: Tetsuo Hatakeyama, Mitsuhiro Kushibe, Takatoshi Watanabe, Seiji Imai, Takashi Shinohe

831

Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation

Authors: Tetsuo Hatakeyama, Takatoshi Watanabe, Mitsuhiro Kushibe, Kazutoshi Kojima, Seiji Imai, Takaya Suzuki, Takashi Shinohe, Tomoyuki Tanaka, Kazuo Arai

443

A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H₂ and H₂O Vapor Atmosphere Post-Oxidation Annealing

Authors: Kenji Fukuda, Junji Senzaki, Mitsuhiro Kushibe, Kazutoshi Kojima, Ryouji Kosugi, Seiji Suzuki, Shinsuke Harada, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

1057

Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

Authors: Kazutoshi Kojima, Toshiyuki Ohno, Seiji Suzuki, Junji Senzaki, Shinsuke Harada, Kenji Fukuda, Mitsuhiro Kushibe, Koh Masahara, Yuuki Ishida, Sadafumi Yoshida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

1053

Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy

Authors: Makato Fujimaki, Rudi Ono, Mitsuhiro Kushibe, Koh Masahara, Kazutoshi Kojima, Takashi Shinohe, Hideyo Okushi, Kazuo Arai

851

Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers

Authors: Yuuki Ishida, Mitsuhiro Kushibe, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida

459

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

Authors: Yuuki Ishida, Mitsuhiro Kushibe, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida

275

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Authors: Johji Nishio, Mitsuhiro Kushibe, Koh Masahara, Kazutoshi Kojima, Toshiyuki Ohno, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

215

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

Authors: Koh Masahara, Tetsuo Takahashi, Mitsuhiro Kushibe, Takaya Ohno, Johji Nishio, Kazutoshi Kojima, Yuuki Ishida, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

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