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Articles by author: Naoki Oyanagi

• A Method of Reducing Micropipes in Thin Films by Using Sublimation Growth
  Published in: Silicon Carbide and Related Materials 2001 (p107)
• Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method
  Published in: Silicon Carbide and Related Materials 2001 (p75)
• Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
  Published in: Silicon Carbide and Related Materials 2000 (p295)
• Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth
  Published in: Silicon Carbide and Related Materials 2001 (p111)
• Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
  Published in: Silicon Carbide and Related Materials - 1999 (p103)
• Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate
  Published in: Silicon Carbide and Related Materials 2003 (p1009)
• Growth and Evaluation of High Quality SiC Crystal by Sublimation Method
  Published in: Silicon Carbide and Related Materials 2001 (p87)
• High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
  Published in: Silicon Carbide and Related Materials 2003 (p29)
• In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
  Published in: Silicon Carbide and Related Materials - 1999 (p457)
• Large Diameter and Long Length Growth of SiC Single Crystal
  Published in: Silicon Carbide and Related Materials 2003 (p99)
• Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth
  Published in: Silicon Carbide and Related Materials 2001 (p43)
• Shape of SiC Bulk Single Crystal Grown by Sublimation
  Published in: Silicon Carbide and Related Materials - 1999 (p99)
• SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique
  Published in: Silicon Carbide and Related Materials - 1999 (p75)
• Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy
  Published in: Silicon Carbide and Related Materials 2001 (p621)
• Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method
  Published in: Silicon Carbide and Related Materials - 2002 (p13)