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Papers by Author: R. Kurps

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Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods

Authors: P. Zaumseil, D. Krüger, R. Kurps, O.V. Fursenko, Peter Formanek

473

Oxygen Ion Bombardment for Local Oxide Formation in Si

Authors: D. Krüger, R. Kurps, Peter Formanek, G. Weidner

77

Application of Small Pulsed Ion Beams for Depth Profiling on Beveled Semiconductor Structures

Authors: D. Krüger, K. Iltgen, R. Kurps

465

Gettering of Au in Heat Treated Si/SiGe/Si Structures

Authors: K. Schmalz, D. Krüger, R. Kurps, T. Morgenstern, H.P. Zeindl

171

Point Defect Concentrations, Distributions and Diffusivity in Thin Si MBE-Films: Experiments and Simulations Based on Profiling of Implanted Multiple Delta Doping Structures

Authors: D. Krüger, R. Kurps, H.P. Zeindl, U. Jagdhold

313

Investigation of Defect Generation and Precipitation in Antimony Implanted Silicon

Authors: D. Krüger, R. Kurps, P. Zaumseil

273

The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si_1-xGe_x - Layers on Silicon Grown by APCVD

Authors: D. Krüger, Th. Morgenstern, R. Kurps, Ch. Quick

197

Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE

Authors: H.P. Zeindl, G. Lippert, J. Drews, R. Kurps, H.J. Osten

117