HomeRobert J. Falster

Papers by Author: Robert J. Falster

Paper TitlePage

Intrinsic Point Defects in Silicon: a Unified View from Crystal Growth, Wafer Processing and Metal Diffusion

Authors: Vladimir V. Voronkov, Robert J. Falster

Abstract: There are several phenomena where the properties of vacancies and self-interstitials in silicon are manifested in straightforward ways. These include the formation of grown-in microdefects, the diffusion of metals (such as Au, Zn), self-diffusion and the installation of vacancy depth profiles in wafers by Rapid Thermal Annealing. Combining features extracted from the analysis of these phenomena, it is possible to define the diffusivities and equilibrium concentrations of the intrinsic point defects. Their diffusivities are remarkably high, and have weak temperature dependence. Their equilibrium concentrations are very low, and have strong temperature dependence.

Nitrogen Out-Diffusion from Czochralski Silicon Monitored by Depth Profiles of Shallow Thermal Donors

Authors: Vladimir V. Voronkov, A.V. Batunina, G.I. Voronkova, Robert J. Falster

117

Nitrogen Diffusion and Interaction with Oxygen in Si

Authors: Vladimir V. Voronkov, Robert J. Falster

Dislocation Locking in Silicon by Oxygen and Oxygen Transport at Low Temperatures

Authors: Semih Senkader, A. Giannattasio, Robert J. Falster, Peter R. Wilshaw

A Perspective from Crystal Growth and Wafer Processing on the Properties of Intrinsic Point Defects in Silicon

Authors: Robert J. Falster, Vladimir V. Voronkov

125

Elastic Instability of Strained Spherical Precipitates as a Cause of Oxide Platelets in Silicon

Authors: Vladimir V. Voronkov, Robert J. Falster

121

Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing

Authors: Robert J. Falster

The Segregation Behaviour of Oxygen at Dislocations in Silicon

Authors: Semih Senkader, Peter R. Wilshaw, D. Gambaro, Robert J. Falster

321

Shallow Thermal Donors in Annealed CZ Silicon and Links to the NL10 EPR Spectrum: The Relevance of H, Al and N Impurities

Authors: R.C. Newman, M.J. Ashwin, R.E. Pritchard, J.H. Tucker, Edward C. Lightowlers, T. Gregorkiewicz, I.S. Zevenbergen, C.A.J. Ammerlaan, Robert J. Falster, M.J. Binns

379

An Investigation of the Possibility that Oxygen Diffusion in Czochralski Silicon is Catalyzed during Clustering

Authors: S.A. McQuaid, B.K. Johnson, Robert J. Falster, K.F. Kelton

347