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Articles by author: Tangali S. Sudarshan

• Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene Using IR Reflection Spectroscopy
  Published in: Silicon Carbide and Related Materials 2011 (p665)
• Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes
  Published in: Silicon Carbide and Related Materials 2005 (p907)
• Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research
  Published in: Silicon Carbide and Related Materials 2003 (p601)
• Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique
  Published in: Silicon Carbide and Related Materials - 2002 (p361)
• Open Core Dislocations and Surface Energy of SiC
  Published in: Silicon Carbide and Related Materials 2005 (p439)
• Oxidation of Porous 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p1113)
• Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers
  Published in: Silicon Carbide and Related Materials 2005 (p371)
• Rapid Anodic Oxidation of 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p873)
• Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes
  Published in: Silicon Carbide and Related Materials 2005 (p367)
• Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density
  Published in: Silicon Carbide and Related Materials 2011 (p399)
• Selective Doping of 6H-SiC by Diffusion of Boron
  Published in: Silicon Carbide and Related Materials - 1999 (p945)
• Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p227)
• Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces
  Published in: Silicon Carbide and Related Materials 2011 (p633)
• Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B
  Published in: Silicon Carbide and Related Materials 2004 (p989)
• Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing
  Published in: Silicon Carbide and Related Materials 2004 (p725)