HomeUrban Forsberg

Papers by Author: Urban Forsberg

Paper TitlePage

In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates

Authors: Margareta K. Linnarsson, Martin S. Janson, Urban Forsberg, Erik Janzén

637

SiC and III-Nitride Growth in Hot-Wall CVD Reactor

Authors: Erik Janzén, Peder Bergman, Örjan Danielsson, Urban Forsberg, Christer Hallin, Jawad Hassan, Anne Henry, Ivan G. Ivanov, A. Kakanakova-Georgieva, P.O.Å. Persson, Qamar-ul Wahab

Abstract: The Hot-Wall CVD reactor was developed for the thick epitaxial SiC layers needed for high voltage power devices but its inherent better properties – better cracking efficiency of the precursor gases and better lateral and vertical temperature homogeneity – should also influence the growth of other materials such as the III-nitrides. We will give some examples of thick SiC layers grown on either off- or on-axis substrates with this technique. We will also show that high-quality III-nitride materials can be grown.

Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC

Authors: A. Kakanakova-Georgieva, Urban Forsberg, Christer Hallin, P.O.Å. Persson, L. Storasta, G.R. Pozina, Jens Birch, L. Hultman, Erik Janzén

991

Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs

Authors: Sang-Mo Koo, Martin Domeij, Carl Mikael Zetterling, Mikael Östling, Urban Forsberg, Erik Janzén

773

Predictions of Nitrogen Doping in SiC Epitaxial Layers

Authors: Örjan Danielsson, Urban Forsberg, Erik Janzén

137

Growth of AlN Films by Hot-Wall CVD and Sublimation Techniques: Effect of Growth Cell Pressure

Authors: A. Kakanakova-Georgieva, Urban Forsberg, Björn Magnusson, Rositza Yakimova, Erik Janzén

1469

Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors

Authors: Erik Danielsson, Carl Mikael Zetterling, Mikael Östling, Urban Forsberg, Erik Janzén

1337

Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors

Authors: Sang-Mo Koo, Sang Kwon Lee, Carl Mikael Zetterling, Mikael Östling, Urban Forsberg, Erik Janzén

1235

Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy

Authors: Anne Henry, Alexsandre Ellison, Urban Forsberg, Björn Magnusson, G.R. Pozina, Erik Janzén

593

Incorporation of Hydrogen (¹H and ²H) into 4H-SiC during Epitaxial Growth

Authors: Margareta K. Linnarsson, Urban Forsberg, Martin S. Janson, Erik Janzén, Bengt Gunnar Svensson

565