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Articles by author: Wilfried von Ammon

• Characterization of Interstitial-Related Bulk Defects in p^- Silicon Substrates by Epitaxial Deposition
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p231)
• Defects in AS-Grown Silicon and their Evolution During Heat Treatments
  Published in: Defects in Semiconductors 19 (p341)
• Impact of Hydrogen on Oxygen Precipitation and Gate Oxide Integrity after RTA Processing
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p127)
• Measurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR Spectroscopy
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p655)
• Microdefects in Nitrogen Doped FZ Silicon Revealed by Li⁺ Drifting
  Published in: Defects in Semiconductors 18 (p1761)
• On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p17)
• Optimized Parameters for Modeling Oxygen Nucleation in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p71)
• Oxygen Precipitation in Nitrogen Doped CZ Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p17)
• Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p11)
• Processing and Characterization of 300 mm Argon-Annealed Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p105)
• Rate Equation Modeling, Ab Initio Calculation, and High Sensitive FTIR Investigations of the Early Stages of Oxide Precipitation in Vacancy-Rich CZ Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p211)