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CONFERENCE
12/9/2012 - 12/12/2012
ACAM7: The 7th Australasian Congress on Applied Mechanics
11/16/2012 - 11/18/2012
2nd International Conference on Manufacturing Engineering and Automation (ICMEA2012)
11/16/2012 - 11/18/2012
more...
Articles by author: Wilfried von Ammon
11 papers on 1 page:
1
Characterization of Interstitial-Related Bulk Defects in p
-
Silicon Substrates by Epitaxial Deposition
Published in:
Gettering anf Defect Engineering in Semiconductor Technology IX
(p231)
Defects in AS-Grown Silicon and their Evolution During Heat Treatments
Published in:
Defects in Semiconductors 19
(p341)
Impact of Hydrogen on Oxygen Precipitation and Gate Oxide Integrity after RTA Processing
Published in:
Gettering anf Defect Engineering in Semiconductor Technology IX
(p127)
Measurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR Spectroscopy
Published in:
Gettering and Defect Engineering in Semiconductor Technology XI
(p655)
Microdefects in Nitrogen Doped FZ Silicon Revealed by Li
+
Drifting
Published in:
Defects in Semiconductors 18
(p1761)
On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals
Published in:
Gettering anf Defect Engineering in Semiconductor Technology IX
(p17)
Optimized Parameters for Modeling Oxygen Nucleation in Silicon
Published in:
Gettering and Defect Engineering in Semiconductor Technology X
(p71)
Oxygen Precipitation in Nitrogen Doped CZ Silicon
Published in:
Gettering and Defect Engineering in Semiconductor Technology XI
(p17)
Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material
Published in:
Gettering and Defect Engineering in Semiconductor Technology XI
(p11)
Processing and Characterization of 300 mm Argon-Annealed Wafers
Published in:
Gettering and Defect Engineering in Semiconductor Technology X
(p105)
Rate Equation Modeling, Ab Initio Calculation, and High Sensitive FTIR Investigations of the Early Stages of Oxide Precipitation in Vacancy-Rich CZ Silicon
Published in:
Gettering and Defect Engineering in Semiconductor Technology XIII
(p211)
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