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Articles by author: Yasuichi Masuda

• Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements
  Published in: Silicon Carbide and Related Materials 2000 (p495)
• Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si₂(CH₃)₆
  Published in: Silicon Carbide and Related Materials - 1999 (p711)
• Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
  Published in: Silicon Carbide and Related Materials 2000 (p123)
• Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCl using Atmospheric CVD
  Published in: Silicon Carbide and Related Materials - 1999 (p257)
• Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials - 1999 (p197)
• Preparation of Ag-Doped NdBa₂Cu₃O_7-δ Superconducting Ceramics by a Sol-Gel Method
  Published in: Electroceramics in Japan I (p121)
• Properties of Soft BaTiO₃ Ceramics for Ferroelectric Thin Film Devices
  Published in: Electroceramics in Japan II (p119)
• Surface Morphology of 4H-SiC Inclined towards <1-100> and <11-20> Grown by APCVD Using the Si₂Cl₆+C₃H₈ System
  Published in: Silicon Carbide and Related Materials 2000 (p139)
• Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p119)
• The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates
  Published in: Silicon Carbide and Related Materials 2001 (p115)