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Articles by keyword: «Carbon Face»

• 1360 V, 5.0 mΩcm² Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)
  Published in: Silicon Carbide and Related Materials 2009 (p987)
• 2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method
  Published in: Silicon Carbide and Related Materials 2004 (p93)
• 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
  Published in: Silicon Carbide and Related Materials 2005 (p153)
• 4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm²/Vs
  Published in: Silicon Carbide and Related Materials 2003 (p1417)
• Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2009 (p123)
• Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability
  Published in: Silicon Carbide and Related Materials 2010 (p354)
• Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height
  Published in: Silicon Carbide and Related Materials 2009 (p893)
• High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1º) Off-Angle
  Published in: Silicon Carbide and Related Materials 2005 (p1043)
• High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H₂ Post-Oxidation Annealing
  Published in: Silicon Carbide and Related Materials - 2002 (p567)
• Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
  Published in: Silicon Carbide and Related Materials 2008 (p549)
• Improved MOS Interface Properties of C-Face 4H-SiC by POCl₃ Annealing
  Published in: Silicon Carbide and Related Materials 2010 (p425)
• Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face
  Published in: Silicon Carbide and Related Materials 2007 (p675)
• Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide
  Published in: Silicon Carbide and Related Materials 2009 (p515)
• Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
  Published in: Silicon Carbide and Related Materials 2009 (p999)
• Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N₂O Nitridation
  Published in: Silicon Carbide and Related Materials 2008 (p557)